Room temperature operation of InAs/AlSb quantum cascade lasers

被引：75

作者：

Teissier, R

Barate, D

Vicet, A

Alibert, C

Baranov, AN

Marcadet, X

Renard, C

Garcia, M

Sirtori, C

Revin, D

Cockburn, J

机构：

[1] Univ Montpellier 2, CEM2, CNRS, UMR 5507, F-34095 Montpellier 05, France

[2] THALES Res & Technol, F-91404 Orsay, France

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[4] Univ Paris 07, F-75221 Paris 05, France

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.1768306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The room temperature operation of InAs/AlSb quantum cascade lasers is reported. The structure, grown by molecular beam epitaxy on an InAs substrate, is based on a vertical transition design and a low loss n(+)-InAs plasmon enhanced waveguide. The lasers emitting near 4.5 mum operate in pulse regime up to 300 K. The threshold current density of 3.18-mm-long lasers is 1.5 kA/cm(2) at 83 K and 9 kA/cm(2) at 300 K. (C) 2004 American Institute of Physics.

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页码：167 / 169

页数：3

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