InAs/AlSb quantum cascade lasers operating at 6.7 μm

被引：19

作者：

Teissier, R ^{[1
]}

Barate, D

Vicet, A

Yarekha, DA

Alibert, C

Baranov, AN

Marcadet, X

Garcia, M

Sirtori, C

机构：

[1] Univ Montpellier 2, CEM2, F-34095 Montpellier, France

[2] THALES Res & Technol, F-91404 Orsay, France

[3] Univ Paris 07, Paris, France

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 17期

关键词：

D O I：

10.1049/el:20030780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum cascade lasers based on the InAs/AlSb material system have been realised. The optical confinement is obtained using a plasmon waveguide with n(+)-InAs cladding layers. In pulse mode the lasers emit close to 6.7 mum with a threshold current density of 5 kA/cm(2) at 90K. The maximum operating temperature is 220K.

引用

页码：1252 / 1254

页数：3

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