Design and simulation of low-threshold antimonide intersubband lasers

被引：63

作者：

Vurgaftman, I

Meyer, JR

Julien, FH

Ram-Mohan, LR

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Paris Sud, URA CNRS 22, Inst Elect Fondamentale, F-91405 Orsay, France

[3] Worcester Polytech Inst, Worcester, MA 01609 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.121976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optically and electrically pumped infrared lasers based on intersubband transitions in InAs/GaSb/AlsSb quantum wells are modeled in detail. The large conduction-band offset of the AlAsSb barriers with respect to the InAs wells allows the lasing wavelength to be shortened to at least 1.9 mu m. Furthermore, the small InAs electron mass results in longer phonon-limited lifetimes in the upper lasing subband as well as larger dipole matrix elements. This leads to the prediction of lower threshold currents, and hence, higher cw operating temperatures than for quantum cascade lasers based on the InCaAs/InAlAs/InP system. (C) 1998 American Institute of Physics.

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页码：711 / 713

页数：3

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