High-temperature type-II superlattice diode laser at λ=2.9 μm

被引：32

作者：

Bewley, WW ^{[1
]}

Aifer, EH

Felix, CL

Vurgaftman, I

Meyer, JR

Lin, CH

Murry, SJ

Zhang, D

Pei, SS

机构：

[1] USN, Res Lab, Code 5613, Washington, DC 20375 USA

[2] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A 2.9 mu m diode laser with InAs/GaSb/Ga0.75In0.25Sb/GaSb superlattice active region displays a maximum operating temperature of 260 K. At 200 K, the threshold current density is 1.1 kA/cm(2) and the quantum efficiency is >15%. The peak output power per facet exceeds 800 mW at 100 K and 200 mW at 200 K for a 0.05% duty cycle. (C) 1997 American Institute of Physics. [S0003-6951(97)02851-9].

引用

页码：3607 / 3609

页数：3

共 21 条

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