λ∼4-5.3 μm intersubband emission from InGaAs-AlAsSb quantum cascade structures

被引：21

作者：

Revin, DG ^{[1
]}

Wilson, LR

Zibik, EA

Green, RP

Cockburn, JW

Steer, MJ

Airey, RJ

Hopkinson, M

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

[3] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 09期

关键词：

D O I：

10.1063/1.1655691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The In0.53Ga0.47As-AlAs0.56Sb0.44 materials system, lattice matched to InP, is an attractive candidate for short wavelength quantum cascade lasers due to the very large conduction band discontinuity (similar to1.6 eV) and compatibility with well established quantum cascade laser waveguide design and fabrication technology. In this letter we report the operation of In0.53Ga0.47As-AlAs0.56Sb0.44 quantum cascade structures emitting in the wavelength range lambdasimilar to4-5.3 mum. Clear intersubband electroluminescence peaks are observed close to the design wavelengths, with full widths at half maximum in the range of similar to30-40 meV. (C) 2004 American Institute of Physics.

引用

页码：1447 / 1449

页数：3

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