Above room temperature operation of short wavelength (λ=3.8 μm) strain-compensated In0.73Ga0.27As-AlAs quantum-cascade lasers

被引：69

作者：

Semtsiv, MP

Ziegler, M

Dressler, S

Masselink, WT

Georgiev, N

Dekorsy, T

Helm, M

机构：

[1] Humboldt Univ, Dept Phys, D-12489 Berlin, Germany

[2] Forschungszentrum Rossendorf EV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.1789246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the design and implementation of a broad-gain and low-threshold (J(th)=860 A/cm(2) at 8 K) quantum-cascade laser emitting between 3.7 and 4.2 mum. The active region design is based on strain-compensated In0.73Ga0.27As-AlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330 K with maximum single-facet output peak powers of 6 W at 8 K and 240 mW at 296 K. The temperature coefficient T-0 is 119 K. (C) 2004 American Institute of Physics.

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页码：1478 / 1480

页数：3

相关论文

共 11 条

[1] Quantum-cascade lasers based on a bound-to-continuum transition [J].

Faist, J ;

Beck, M ;

Aellen, T ;

Gini, E .

APPLIED PHYSICS LETTERS, 2001, 78 (02) :147-149

[2] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[3] Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InP [J].

Georgiev, N ;

Dekorsy, T ;

Eichhorn, F ;

Helm, M ;

Semtsiv, MP ;

Masselink, WT .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :210-212

[4] Recent progress in quantum cascade lasers and applications [J].

Gmachl, C ;

Capasso, F ;

Sivco, DL ;

Cho, AY .

REPORTS ON PROGRESS IN PHYSICS, 2001, 64 (11) :1533-1601

[5] Continuous-wave operation of a 5.2 μm quantum-cascade laser up to 210 K [J].

Ishaug, B ;

Hwang, WY ;

Um, J ;

Guo, BJ ;

Lee, H ;

Lin, CH .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1745-1747

[6] BAND NONPARABOLICITY EFFECTS IN SEMICONDUCTOR QUANTUM-WELLS [J].

NELSON, DF ;

MILLER, RC ;

KLEINMAN, DA .

PHYSICAL REVIEW B, 1987, 35 (14) :7770-7773

[7] An InAs-based intersubband quantum cascade laser [J].

Ohtani, K ;

Ohno, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (11B) :L1279-L1280

[8] BAND LINEUPS AND DEFORMATION POTENTIALS IN THE MODEL-SOLID THEORY [J].

VAN DE WALLE, CG .

PHYSICAL REVIEW B, 1989, 39 (03) :1871-1883

[9] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

[10] Terahertz quantum-cascade laser at λ≈100 μm using metal waveguide for mode confinement [J].

Williams, BS ;

Kumar, S ;

Callebaut, H ;

Hu, Q ;

Reno, JL .

APPLIED PHYSICS LETTERS, 2003, 83 (11) :2124-2126