Electron spectroscopy imaging to study ELNES at a nanoscale

被引:12
作者
Bayle-Guillemaud, P
Radtke, G
Sennour, M
机构
[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France
[2] Inst Natl Sci Appl, GEMPPM, F-69621 Villeurbanne, France
关键词
AlN; bonding map; EELS; EFTEM; ELNES; ESI; GaN;
D O I
10.1046/j.1365-2818.2003.01179.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
Series of energy-filtered TEM images have been acquired with very narrow energy slit using a post-column energy filter. This allowed us to reconstruct spectra with an energy resolution estimated to 2 eV, and a spatial resolution in the order of 0.5 nm. In that way, fine structures of the N-K edge in AlN/GaN heterostructures have been investigated and compared to EELS spectra. The fine structure in the two nitrides is very sensitive to the local environment. Very good agreement between ESI and EELS spectra was found. Moreover, this technique allowed analysis of the AlN/GaN interface at a nanoscale. The second example is an application of the technique to construct bonding maps. In this case, maps differentiating AlN nanoprecipitates with either the cubic or the hexagonal phase were created.
引用
收藏
页码:66 / 73
页数:8
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