Intersubband and intrasubband overlap integrals in AlxGa1-xN/GaN single-well heterostructures

被引：12

作者：

Kalafi, M ^{[1
]}

Asgari, A ^{[1
]}

机构：

[1] Tabriz Univ, Ctr Appl Phys Res, Tabriz, Iran

来源：

PHYSICS LETTERS A | 2003年 / 309卷 / 3-4期

关键词：

polar-phonon; AlGaN/GaN; scattering;

D O I：

10.1016/S0375-9601(03)00189-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this Letter we present the result of numerical calculation for intersubband and intrasubband coupling coefficient for different value of x (Al mole fraction) for AlxGa1-xN/GaN heterostructures. We also propose an analytical relation for H-11(Q) that fits exactly with its numerical calculation. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：306 / 310

页数：5

相关论文

共 10 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[2] Electron mobility in AlxGa1-xN/GaN heterostructures [J].

Hsu, L ;

Walukiewicz, W .

PHYSICAL REVIEW B, 1997, 56 (03) :1520-1528

[3]

KALAFI M, IN PRESS PHYS STAT A

[4] High-temperature electron transport properties in AlGaN/GaN heterostructures [J].

Maeda, N ;

Tsubaki, K ;

Saitoh, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 79 (11) :1634-1636

[5] Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers [J].

Smorchkova, IP ;

Keller, S ;

Heikman, S ;

Elsass, CR ;

Heying, B ;

Fini, P ;

Speck, JS ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2000, 77 (24) :3998-4000

[6] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

[7] INTERSUBBAND PHONON OVERLAP INTEGRALS FOR ALGAAS/GAAS SINGLE-WELL HETEROSTRUCTURES [J].

YOKOYAMA, K ;

HESS, K .

PHYSICAL REVIEW B, 1985, 31 (10) :6872-6874

[8] Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures [J].

Yu, TH ;

Brennan, KF .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) :3827-3834

[9] Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor [J].

Zhang, YF ;

Singh, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :587-594

[10] Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well at AlxGa1-xN/GaN heterostructures [J].

Zheng, ZW ;

Shen, B ;

Zhang, R ;

Gui, YS ;

Jiang, CP ;

Ma, ZX ;

Zheng, GZ ;

Guo, SL ;

Shi, Y ;

Han, P ;

Zheng, YD ;

Someya, T ;

Arakawa, Y .

PHYSICAL REVIEW B, 2000, 62 (12) :R7739-R7742