INTERSUBBAND PHONON OVERLAP INTEGRALS FOR ALGAAS/GAAS SINGLE-WELL HETEROSTRUCTURES

被引：31

作者：

YOKOYAMA, K

HESS, K

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.31.6872

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6872 / 6874

页数：3

共 9 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3893-3899

[2] COMPUTER SOLUTIONS TO SCHRODINGER EQUATION [J].

CHOW, PC .

AMERICAN JOURNAL OF PHYSICS, 1972, 40 (05) :730-&

[3] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[4] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].

HESS, K .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486

[5] ELECTRON-TRANSPORT IN POLAR HETEROLAYERS [J].

PRICE, PJ .

SURFACE SCIENCE, 1982, 113 (1-3) :199-210

[6] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

PRICE, PJ .

ANNALS OF PHYSICS, 1981, 133 (02) :217-239

[7] POLAR-OPTICAL-MODE SCATTERING FOR AN IDEAL QUANTUM-WELL HETEROSTRUCTURE [J].

PRICE, PJ .

PHYSICAL REVIEW B, 1984, 30 (04) :2234-2235

[8] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[9] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

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