Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Defects introduced in epitaxially grown cubic silicon carbide (3C-SiC) by implantation of nitrogen (N-2(+)) and aluminum ions (Al+) at a wide temperature range from room temperature to 1200 degrees C were studied using electron spin resonance (ESR), photoluminescence (PL), and positron annihilation spectroscopy (PAS). It is found that while hot-implantation reduces paramagnetic defects and improves the crystallinity of implanted layers, it causes the simultaneous formation of vacancy clusters. These results can be explained in terms of the migration and combination of point defects during hot-implantation. The formation and reduction of defects by hot-implantation are discussed in connection with implantation temperature, dose, and ion species. Postimplantation annealing of: the defects in hot-implanted 3C-SiC was also examined by the ESR, FL, and PAS technique. The influence of residual defects on the electrical properties of implanted 3C-SiC layers is also discussed. (C) 1997 American Institute of Physics.