Two-step process for the metalorganic chemical vapor deposition growth of high quality AlN films on sapphire

被引：41

作者：

Paduano, Q ^{[1
]}

Weyburne, D ^{[1
]}

机构：

[1] Air Force Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4A期

关键词：

two-step MOCVD; AlN; sapphire substrate; X-ray diffraction;

D O I：

10.1143/JJAP.42.1590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial AlN films were deposited on (0001) sapphire using a new metalorganic chemical vapor deposition process in which optimal substrate nitridation is combined with modulated ammonia flow and a growth pressure reduction from 150 torr to 40 torr after the first stage of growth. A significant improvement in the full width half maximum (FWHM) of the rocking curves was obtained. The best layers had FWHM of 330 arc sec/650 arc sec for the (0002)/(10 (1) over bar2) reflections, respectively.

引用

页码：1590 / 1591

页数：2

共 14 条

[1] Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates [J].

Arulkumaran, S ;

Sakai, M ;

Egawa, T ;

Ishikawa, H ;

Jimbo, T ;

Shibata, T ;

Asai, K ;

Sumiya, S ;

Kuraoka, Y ;

Tanaka, M ;

Oda, O .

APPLIED PHYSICS LETTERS, 2002, 81 (06) :1131-1133

[2]

Baranov PG, 1998, MRS INTERNET J N S R, V3

[3] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF SINGLE-CRYSTAL EPITAXIAL ALUMINUM NITRIDE THIN-FILMS ON SAPPHIRE, SILICON-CARBIDE AND SILICON SUBSTRATES [J].

CHAUDHURI, J ;

THOKALA, R ;

EDGAR, JH ;

SYWE, BS .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (12) :6263-6266

[4] Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition [J].

Egawa, T ;

Ohmura, H ;

Ishikawa, H ;

Jimbo, T .

APPLIED PHYSICS LETTERS, 2002, 81 (02) :292-294

[5] Dependence of crystal quality on residual strain in strain-controlled thin AlN layer grown by metalorganic vapor phase epitaxy [J].

Ishihara, Y ;

Yamamoto, J ;

Kurimoto, M ;

Takano, T ;

Honda, T ;

Kawanishi, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (11B) :L1296-L1298

[6] Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition [J].

Keller, S ;

Keller, BP ;

Wu, YF ;

Heying, B ;

Kapolnek, D ;

Speck, JS ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1996, 68 (11) :1525-1527

[7]

Meyer BK, 1999, PHYS STATUS SOLIDI B, V216, P187, DOI 10.1002/(SICI)1521-3951(199911)216:1<187::AID-PSSB187>3.0.CO

[8]

2-8

[9] Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy [J].

Miyake, H ;

Motogaito, A ;

Hiramatsu, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (9AB) :L1000-L1002

[10] Growth of high-quality AlN and AlN/GaN/AlN heterostructure on sapphire substrate [J].

Ohba, Y ;

Hatano, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B) :L1013-L1015

← 1 2 →