Tunable interfacial properties of epitaxial graphene on metal substrates

被引：112

作者：

Gao, Min ^{[1
]}

Pan, Yi ^{[1
]}

Zhang, Chendong ^{[1
]}

Hu, Hao ^{[1
]}

Yang, Rong ^{[1
]}

Lu, Hongliang ^{[1
]}

Cai, Jinming ^{[1
]}

Du, Shixuan ^{[1
]}

Liu, Feng ^{[2
]}

Gao, H. -J. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China

[2] Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 05期

基金：

美国国家科学基金会;

关键词：

density functional theory; epitaxial layers; graphene; interface states; nickel; platinum; ruthenium; scanning tunnelling microscopy; semiconductor-metal boundaries; substrates; thermoelectricity; P-N-JUNCTIONS; ROOM-TEMPERATURE; TRANSISTORS; MICROSCOPY; TRANSPORT; SHEETS; FIELD;

D O I：

10.1063/1.3309671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n-type and p-type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices.

引用

页数：3

共 21 条

[11]

Lin X, 2005, CHINESE PHYS, V14, P1536, DOI 10.1088/1009-1963/14/8/011

[12] Scanning tunneling microscopy of graphene on Ru(0001) [J].

Marchini, S. ;

Guenther, S. ;

Wintterlin, J. .

PHYSICAL REVIEW B, 2007, 76 (07)

[13] Structure of epitaxial graphene on Ir(111) [J].

N'Diaye, Alpha T. ;

Coraux, Johann ;

Plasa, Tim N. ;

Busse, Carsten ;

Michely, Thomas .

NEW JOURNAL OF PHYSICS, 2008, 10

[14] Room-temperature quantum hall effect in graphene [J].

Novoselov, K. S. ;

Jiang, Z. ;

Zhang, Y. ;

Morozov, S. V. ;

Stormer, H. L. ;

Zeitler, U. ;

Maan, J. C. ;

Boebinger, G. S. ;

Kim, P. ;

Geim, A. K. .

SCIENCE, 2007, 315 (5817) :1379-1379

[15] Two-dimensional gas of massless Dirac fermions in graphene [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Katsnelson, MI ;

Grigorieva, IV ;

Dubonos, SV ;

Firsov, AA .

NATURE, 2005, 438 (7065) :197-200

[16] Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001) [J].

Pan, Yi ;

Zhang, Haigang ;

Shi, Dongxia ;

Sun, Jiatao ;

Du, Shixuan ;

Liu, Feng ;

Gao, Hong-jun .

ADVANCED MATERIALS, 2009, 21 (27) :2777-+

[17]

Tombros N, 2007, NATURE, V448, P571, DOI 10.1038/nature06037

[18] Periodically rippled graphene: Growth and spatially resolved electronic structure [J].

Vazquez de Parga, A. L. ;

Calleja, F. ;

Borca, B. ;

Passeggi, M. C. G., Jr. ;

Hinarejos, J. J. ;

Guinea, F. ;

Miranda, R. .

PHYSICAL REVIEW LETTERS, 2008, 100 (05)

[19] Quantum hall effect in a gate-controlled p-n junction of graphene [J].

Williams, J. R. ;

DiCarlo, L. ;

Marcus, C. M. .

SCIENCE, 2007, 317 (5838) :638-641

[20] CHARGE-TRANSFER MECHANISM FOR THE (MONOLAYER GRAPHITE)/NI(111) SYSTEM [J].

YAMAMOTO, K ;

FUKUSHIMA, M ;

OSAKA, T ;

OSHIMA, CH .

PHYSICAL REVIEW B, 1992, 45 (19) :11358-11361

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