Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon

被引：20

作者：

Harasek, S ^{[1
]}

Wanzenboeck, HD ^{[1
]}

Bertagnolli, E ^{[1
]}

机构：

[1] Vienna Tech Univ, Inst Solid State Elect, A-1040 Vienna, Austria

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2003年 / 21卷 / 03期

关键词：

D O I：

10.1116/1.1566786

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-k ZrO2 thin films are grown on p-type silicon by metal-organic chemical vapor deposition based on zirconiumtetrakistrifluoroacetylacetonate as single-source precursor system. Annealing of the as-grown films is performed to investigate the impact of oxidative and reductive atmospheres On thin film properties. The composition of the ultrathin films is examined by Auger spectroscopy, whereas metal-oxide-semiconductor (MOS) structures are employed to extract electrical characteristics. Equivalent oxide thicknesses down to 2 nm and interface trap densities of 5 X 10(11)cm(-2) eV(-1) at midgap are obtained. MOS capacitors show extremely low leakage currents, promising to reduce gate leakage by more than a factor of 10(3) compared to SiO2. The correlation between compositional and electrical properties is discussed on the basis of postdeposition annealing procedures resulting in a consistent explanation of the observed effects. (C) 2003 American Vacuum Society.

引用

页码：653 / 659

页数：7

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