Mathematical modeling of CMP conditioning process

被引:35
作者
Chang, Onemoon
Kim, Hyoungjae
Park, Kihyun
Park, Boumyoung
Seo, Heondeok
Jeong, Haedo
机构
[1] Pusan Natl Univ, Sch Mech Engn, Pusan 609735, South Korea
[2] Pusan Natl Univ, Dept Precis & Mech Engn, Pusan 609735, South Korea
[3] Pusan Natl Univ, KITECH, Pusan 609735, South Korea
关键词
CMP; kinematic analysis; velocity profile; sliding distance; MRR; conditioning process;
D O I
10.1016/j.mee.2006.11.011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Up to now, the conditioning model with an oscillating conditioner wheel has not been studied. In this paper, kinematic analysis of the conditioning process and mathematical modeling of pad wear while the conditioner wheel oscillates is studied and the results show how the various parameters of the conditioning process influence the pad shape. The conditioning of the polishing pad is one of the most important processes associated with the CMP (Chemical Mechanical Polishing). As the wafer is polished, the surface of the pad can be deteriorated with a reduced polishing rate and reduced planarity due to wear and glazing of the pad. Thus, the polishing pad needs to be conditioned to maintain its effectiveness. In general, the conditioning process is used to regenerate the pad surface by breaking the glazed area of the pad and increase the MRR (Material Removal Rate) and give us longer pad life. However, as the conditioning process continues, the pad shape becomes more and more concave over the whole pad while the conditioner wheel oscillates (Y.Y. Zhou, E.C. Davis, Mat. Sci. Eng. B. 68 (1999), 91-98). It has been shown that the concavity of the polishing pad increases with conditioning time longer conditioning induces a higher incidence of concavity of the polishing pad. Therefore, the conditioning process is related to the WIWNU (Within Wafer Non-Uniformity). Through this conditioning model, thickness variation of the polishing pad can be predicted. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:577 / 583
页数:7
相关论文
共 10 条
[1]   A theory of pad conditioning for chemical-mechanical polishing [J].
Borucki, LJ ;
Witelski, T ;
Please, C ;
Kramer, PR ;
Schwendeman, D .
JOURNAL OF ENGINEERING MATHEMATICS, 2004, 50 (01) :1-24
[2]   Effects of kinematic variables on nonuniformity in chemical mechanical planarization [J].
Hocheng, H ;
Tsai, HY ;
Tsai, MS .
INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2000, 40 (11) :1651-1669
[3]   Pad conditioning in chemical mechanical polishing [J].
Hooper, BJ ;
Byrne, G ;
Galligan, S .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 123 (01) :107-113
[4]  
HORNG TL, 2004, 7 INT S ADV ABR TECH, P1
[5]   Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization [J].
Kim, H ;
Jeong, H .
JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (01) :53-60
[6]  
Kurobe T, 1997, INT J JPN S PREC ENG, V31, P115
[7]  
LI SH, 2000, CHEM MECH POLISHING, P157
[8]  
OLIVER MR, 2004, CHEM MECH PLANARIZAT, P157
[9]  
Preston F.W, 1927, J SOC GLASS TECHNOL, V11, P227
[10]   Variation of polish pad shape during pad dressing [J].
Zhou, YY ;
Davis, EC .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 68 (02) :91-98