The oxygen dimer in silicon: Some experimental observations

被引:23
作者
Hallberg, T [1 ]
Lindstrom, JL
Murin, LI
Markevich, VP
机构
[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
[2] Inst Solid State & Semicond Phys, Minsk 220072, BELARUS
来源
DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷
关键词
silicon; oxygen dimer; vibrational frequencies; annealing; binding energy;
D O I
10.4028/www.scientific.net/MSF.258-263.361
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The results of an experimental study of oxygen dimers in silicon are presented. Three infrared vibrational bands at about 1012, 1060 and 1105 cm(-1) are shown to be related to oxygen dimers. This assignment is based on the correlation between the strengths of these bands and the interstitial oxygen concentration and on the analysis of changes in the intensity of these bands after heat-treatments in the temperature range 350-1000 degrees C. Isotopical shifts of the bands in the samples doped with O-18 gives additional support for the above identification. The binding energy of the oxygen dimer is found to be about 0.3 eV. It is estimated that the mobility of oxygen dimers should be about 4 orders of magnitude higher as compared with that of interstitial oxygen.
引用
收藏
页码:361 / 366
页数:6
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