A parametric study of AlN this films grown by pulsed laser deposition

被引：14

作者：

Verardi, P

Dinescu, M

Stanciu, C

Gerardi, C

Mirenghi, L

Sandu, V

机构：

[1] CNR, Ist Acust Om Corbino, I-00189 Rome, Italy

[2] INFPLR, Laser Dept, RO-76900 Bucharest, Romania

[3] CNRSM, PASTIS, I-72100 Brindisi, Italy

[4] INFM, RO-76900 Bucharest, Romania

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

X-ray diffraction; AlN thin films; pulsed laser deposition;

D O I：

10.1016/S0921-5107(97)00167-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality AlN thin films were grown at 200-450 degrees C on sapphire substrates by laser ablation of Al targets in nitrogen reactive atmosphere. The nitrogen pressure was varied between 10(-3) and 10(-1) mbar. The reactive gas pressure during irradiation and the temperature of the substrate were found to essentially influence the quality of the layers. X-ray diffraction analysis evidenced the formation of highly orientated layers for a very restrictive set of parameters. Other analysis techniques, like X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, optical transmission spectroscopy have been used to evidence the good stoichiometry and purity of the films. The characteristics of these films were compared with those of AlN thin films deposited in similar experimental conditions, on Si (100) and Si (111) substrates. (C) 1997 Elsevier Science S.A.

引用

页码：223 / 227

页数：5

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