Electron properties of fluorinated single-layer graphene transistors

被引：313

作者：

Withers, F. ^{[1
]}

Dubois, M. ^{[2
]}

Savchenko, A. K. ^{[1
]}

机构：

[1] Univ Exeter, Sch Phys, Ctr Graphene Sci, Exeter EX4 4QL, Devon, England

[2] Clermont Univ UBP, CNRS, UMR 6002, Lab Mat Inorgan, F-63177 Aubiere, France

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

RAMAN-SPECTROSCOPY; CARBON NANOFIBRES; HYDROGENATION;

D O I：

10.1103/PhysRevB.82.073403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has a very large and strongly temperature-dependent resistance in the electroneutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localized electron states.

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页数：4

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