Fundamental physics of infrared detector materials

被引:146
作者
Kinch, MA [1 ]
机构
[1] DRS Infrared Technol, Dallas, TX 75374 USA
关键词
infrared detector; photon detector; thermal detector; HgCdTe;
D O I
10.1007/s11664-000-0229-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The fundamental parameters of IR photon detection are discussed relevant to the meaningful comparison of a wide range of proposed IR detecting materials systems. The thermal generation rate of the IR material is seen to be the key parameter that enables this comparison. The simple materials physics of 1) intrinsic direct bandgap semiconductors; 2) extrinsic semiconductors; 3) quantum well devices, including types I, II, and III superlattices; 4) Si Schottky barriers; and 5) high temperature superconductors, will be examined with regard to the potential performance of these materials as IR detectors, utilizing the thermal generation rate as a differentiator. The possibility of room temperature photon detection over the whole IR spectral range is discussed, and comparisons made with uncooled thermal detection.
引用
收藏
页码:809 / 817
页数:9
相关论文
共 23 条
[1]   NONEQUILIBRIUM DEVICES FOR INFRARED DETECTION [J].
ASHLEY, T ;
ELLIOTT, CT .
ELECTRONICS LETTERS, 1985, 21 (10) :451-452
[2]  
BEATTIE AR, COMMUNICATION
[3]   SENSITIVITY LIMITS FOR EXTRINSIC AND INTRINSIC INFRARED DETECTORS [J].
BLOUKE, MM ;
BURGETT, CB ;
WILLIAMS, RL .
INFRARED PHYSICS, 1973, 13 (01) :61-71
[4]  
BRODERSEN RW, 1975, P INT C APPL CCDS SA, P331
[5]  
CASSELMAN TN, P 1999 US WORKSH PHY
[6]   METALLURGY AND PHYSICAL PROPERTIES OF MERCURY-DOPED GERMANIUM RELATED TO PERFORMANCES OF INFRARED DETECTOR [J].
DARVIOT, Y ;
SORRENTI.A ;
JOLY, B ;
PAJOT, B .
INFRARED PHYSICS, 1967, 7 (01) :1-&
[7]   Improvement of infrared detector performance in carrier depleted strained layer type II superlattices [J].
Grein, CH ;
Ehrenreich, H .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (12) :6365-6367
[8]   RADIATIVE LIFETIME IN SEMICONDUCTORS FOR INFRARED DETECTION [J].
HUMPHREYS, RG .
INFRARED PHYSICS, 1986, 26 (06) :337-342
[9]   LOW-TEMPERATURE INTERDIFFUSION IN THE HGCDTE/CDTE SYSTEM, STUDIED AT NEAR-ATOMIC RESOLUTION [J].
KIM, Y ;
OURMAZD, A ;
FELDMAN, RD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :1116-1119
[10]   RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].
KINCH, MA ;
BRAU, MJ ;
SIMMONS, A .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1649-1663