Wafer-Scale Synthesis and Transfer of Graphene Films

被引：991

作者：

Lee, Youngbin ^{[1
,2
]}

Bae, Sukang ^{[1
,2
]}

Jang, Houk ^{[3
]}

Jang, Sukjae ^{[1
,2
]}

Zhu, Shou-En ^{[3
]}

Sim, Sung Hyun ^{[4
]}

Song, Young Il ^{[5
]}

Hong, Byung Hee ^{[1
,2
,4
]}

Ahn, Jong-Hyun ^{[1
,2
,3
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Ctr Human Interface Nano Technol HINT, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[5] Samsung Techwin, Digital & IT Solut Div, Digital Solut R&D Team, Prod Dev Grp, Songnam 462807, South Korea

来源：

NANO LETTERS | 2010年 / 10卷 / 02期

关键词：

Graphene; transfer; field effect transistor; strain gauge; stretchable electronics; CARBON NANOTUBES; TRANSISTORS;

D O I：

10.1021/nl903272n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on NI and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. we also demonstrated the applications of the large-area graphene films for the batch fabrication of held-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was similar to 6.1. These methods represent a significant. step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

引用

页码：490 / 493

页数：4

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