Positively charged defects associated with self-assembled quantum dot formation

被引：6

作者：

Belyaev, AE

Stoddart, ST

Martin, PM

Main, PC ^{[1
]}

Eaves, L

Henini, M

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] NASU, Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 24期

关键词：

D O I：

10.1063/1.126709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance measurements are used to investigate a series of single-barrier n-i-n GaAs/AlAs/GaAs heterostructures incorporating a layer of self-assembled InAs quantum dots into the AlAs barrier. They reveal a low-density, excess positive charge in the AlAs barrier which we attribute to defects associated with quantum dot formation. The quantity of positive charge is proportional to the amount of AlAs deposited on top of the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)02424-4].

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页码：3570 / 3572

页数：3

相关论文

共 11 条

[1]

[Anonymous], QUANTUM DOT HETEROST

[2] Electronic structure of self-assembled InAs quantum dots in GaAs matrix [J].

Brounkov, PN ;

Polimeni, A ;

Stoddart, ST ;

Henini, M ;

Eaves, L ;

Main, PC ;

Kovsh, AR ;

Musikhin, YG ;

Konnikov, SG .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1092-1094

[3] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].

FANG, FF ;

HOWARD, WE .

PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&

[4]

Ihn T, 1998, USP FIZ NAUK+, V168, P132, DOI 10.1070/PU1998v041n02ABEH000342

[5] Resonant magnetotunneling through individual self-assembled InAs quantum dots [J].

Itskevich, IE ;

Ihn, T ;

Thornton, A ;

Henini, M ;

Foster, TJ ;

Moriarty, P ;

Nogaret, A ;

Beton, PH ;

Eaves, L ;

Main, PC .

PHYSICAL REVIEW B, 1996, 54 (23) :16401-16404

[6] OBSERVATION OF SPACE-CHARGE BUILDUP AND THERMALIZATION IN AN ASYMMETRIC DOUBLE-BARRIER RESONANT TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

SHEARD, FW ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

TOOMBS, GA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (51) :10605-10611

[7] Landau-level spectroscopy of a two-dimensional electron system by tunneling through a quantum dot [J].

Main, PC ;

Thornton, ASG ;

Hill, RJA ;

Stoddart, ST ;

Ihn, T ;

Eaves, L ;

Benedict, KA ;

Henini, M .

PHYSICAL REVIEW LETTERS, 2000, 84 (04) :729-732

[8] Resonant tunneling of electrons via 20 nm scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states [J].

Narihiro, M ;

Yusa, G ;

Nakamura, Y ;

Noda, T ;

Sakaki, H .

APPLIED PHYSICS LETTERS, 1997, 70 (01) :105-107

[9] Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots [J].

Polimeni, A ;

Patanè, A ;

Henini, M ;

Eaves, L ;

Main, PC .

PHYSICAL REVIEW B, 1999, 59 (07) :5064-5068

[10] Tunneling current through self-assembled InAs quantum dots embedded in symmetric and asymmetric AlGaAs [J].

Suzuki, T ;

Haga, Y ;

Nomoto, K ;

Taira, K ;

Hase, I .

SOLID-STATE ELECTRONICS, 1998, 42 (7-8) :1303-1307