Photoemission study of energy-band alignment for RuOx/HfO2/Si system

被引：38

作者：

Li, Q

Wang, SJ

Li, KB

Huan, ACH

Chai, JW

Pan, JS

Ong, CK

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Inst Mat Res & Engn, Singapore 117602, Singapore

[3] Data Storage Inst, Singapore 117608, Singapore

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期

关键词：

D O I：

10.1063/1.1839287

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductive oxides RuOx as alternative electrode on high-kappa HfO2 gate dielectric have been fabricated by ultrahigh-vacuum sputtering and subsequently oxidized using oxygen plasma. The energy-band alignment for the RuOx/HfO2/Si system and the oxidation-state dependence of barrier height for RuOx contacting to HfO2 dielectrics has been analyzed by x-ray photoemission spectroscopy. The valence- and conduction-band offsets of HfO2/Si are determined to be 3.05+/-0.1 and 1.48+/-0.1 eV, respectively. The barrier heights for the RuOx contacting to HfO2 are oxidation-state dependent, in the range of 1.95-2.73 eV. (C) 2004 American Institute of Physics.

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页码：6155 / 6157

页数：3

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