Epitaxial growth of highly conductive RuO2 thin films on (100) Si

被引：63

作者：

Jia, QX ^{[1
]}

Song, SG ^{[1
]}

Wu, XD ^{[1
]}

Cho, JH ^{[1
]}

Foltyn, SR ^{[1
]}

Findikoglu, AT ^{[1
]}

Smith, JL ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,MST5,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 08期

关键词：

D O I：

10.1063/1.115715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductive RuO2 thin films have been heteroepitaxially grown by pulsed laser deposition on Si substrates with yttria-stabilized zirconia (YSZ) buffer layers. The RuO2 thin films deposited under optimized processing conditions are a-axis oriented normal to the Si substrate surface with a high degree of in-plane alignment with the major axes of the (100) Si substrate. Cross-sectional transmission electron microscopy analysis on the RuO2/YSZ/Si multilayer shows an atomically sharp interface between the RuO2 and the YSZ. Electrical measurements show that the crystalline RuO2 thin films are metallic over a temperature range from 4.2 to 300 K and are highly conductive with a room-temperature resistivity of 37+/-2 mu Omega cm. The residual resistance ratio (R(300 K)/R(4.2 K)) above 5 for our RuO2 thin films is the highest ever reported for such films on Si substrates. (C) 1996 American Institute of Physics.

引用

页码：1069 / 1071

页数：3

共 19 条

[1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES [J].