Low-energy electron diffraction study of the phase transition of Si(001) surface below 40 k

被引：38

作者：

Matsumoto, M ^{[1
]}

Fukutani, K ^{[1
]}

Okano, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.90.106103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The phase transition of Si(001) surface below 40 K was studied by low-energy electron diffraction (LEED). The temperature dependence of the intensities and widths of the quarter order diffraction spots and LEED intensity versus electron energy curves (I-V curves) were obtained in the temperature region from 20 to 300 K. While the spot intensities of the quarter order spots decrease and the widths broaden, the I-V curves do not change so much below 40 K. This clearly shows that a phase transition occurs from an ordered phase above 40 K to a disordered phase below 40 K.

引用

页数：4

共 27 条

[1] LOW-ENERGY ION-SCATTERING FROM THE SI(001) SURFACE [J].

AONO, M ;

HOU, Y ;

OSHIMA, C ;

ISHIZAWA, Y .

PHYSICAL REVIEW LETTERS, 1982, 49 (08) :567-570

[2] Ground-state reconstruction of the Si(001) surface: symmetric versus buckled dimers [J].

Bokes, P ;

Stich, I ;

Mitas, L .

CHEMICAL PHYSICS LETTERS, 2002, 362 (5-6) :559-566

[3] ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47

[4] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357

[5] p(2 x 2) phase of buckled dimers of Si(100) observed on n-type substrates below 40 K by scanning tunneling microscopy -: art. no. 286104 [J].

Hata, K ;

Yoshida, S ;

Shigekawa, H .

PHYSICAL REVIEW LETTERS, 2002, 89 (28)

[6] How to fabricate a defect free Si(001) surface [J].

Hata, K ;

Kimura, T ;

Ozawa, S ;

Shigekawa, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2000, 18 (04) :1933-1936

[7] Role of electronic correlation in the Si(100) reconstruction: A quantum Monte Carlo study [J].

Healy, SB ;

Filippi, C ;

Kratzer, P ;

Penev, E ;

Scheffler, M .

PHYSICAL REVIEW LETTERS, 2001, 87 (01) :1-016105

[8] PHOTOEMISSION-STUDIES OF INTRINSIC SURFACE-STATES ON SI(100) [J].

HIMPSEL, FJ ;

EASTMAN, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1297-1299

[9] ORDER-DISORDER PHASE-TRANSITION ON THE SI(001) SURFACE - CRITICAL ROLE OF DIMER DEFECTS [J].

INOUE, K ;

MORIKAWA, Y ;

TERAKURA, K ;

NAKAYAMA, M .

PHYSICAL REVIEW B, 1994, 49 (20) :14774-14777

[10] QUANTUM DIFFUSION OF POSITIVE MUONS IN COPPER [J].

KADONO, R ;

IMAZATO, J ;

MATSUZAKI, T ;

NISHIYAMA, K ;

NAGAMINE, K ;

YAMAZAKI, T ;

RICHTER, D ;

WELTER, JM .

PHYSICAL REVIEW B, 1989, 39 (01) :23-41

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