p(2 x 2) phase of buckled dimers of Si(100) observed on n-type substrates below 40 K by scanning tunneling microscopy -: art. no. 286104

被引:68
作者
Hata, K [1 ]
Yoshida, S [1 ]
Shigekawa, H [1 ]
机构
[1] Univ Tsukuba, Inst Appl Phys, 21st Century COE, Tsukuba, Ibaraki 3058573, Japan
关键词
D O I
10.1103/PhysRevLett.89.286104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have investigated the basic surface reconstruction of Si(100) on well defined surfaces fabricated on various substrates at low temperatures (-80 K) by scanning tunneling microscopy. Below 40 K, the single p(2x2) phase, a phase never observed before, was observed exclusively on n-type substrates doped in the range of 0.002 to 0.017 Omega cm. We also exclude the possibility of the (2x1) symmetric dimer commonly observed at low temperature (-10 K) being the basic surface reconstruction by showing that a buckled dimer can be flip-flopped by the tunneling tip.
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页数:4
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