How to fabricate a defect free Si(001) surface

被引：90

作者：

Hata, K ^{[1
]}

Kimura, T

Ozawa, S

Shigekawa, H

机构：

[1] Univ Tsukuba, Japan Sci & Technol Corp, Inst Phys Appl, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, CREST, Tsukuba, Ibaraki 3058573, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582482

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the successful fabrication of an almost defect free Si(001) surface by refining the standard annealing and flashing surface preparation method. On any desired samples, we can routinely fabricate a surface with defect densities lower than 0.1%, significantly reducing the defect density compared to surfaces fabricated by standard methodology. (C) 2000 American Vacuum Society. [S0734-2101(00)12004-4].

引用

页码：1933 / 1936

页数：4

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