Structure transformation of the C defects observed at low temperature (80 K)

被引:4
作者
Hata, K [1 ]
Morita, R
Yamashita, M
Shigekawa, H
机构
[1] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Japan Sci & Technol Corp, CREST, Sapporo, Hokkaido 0608628, Japan
[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan
[4] Univ Tsukuba, Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3058573, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6B期
关键词
scanning tunneling microscopy; scanning tunneling spectroscopies; surface electronic phenomena; silicon; surface defects;
D O I
10.1143/JJAP.38.3837
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dynamical characteristics of the C defect at low temperature (80 K) were studied by sequential scanning tunneling microscopy observations. We found that the: C defect frequently transforms into a another type of defect termed as the C-2(LT) defect. In addition, the reversal C-2(LT) to C defect structural transformation was observed which implies that the C-2(LT) defect is a metastable state of the C defect. The observed structural transformation was completely different from that observed at room temperature. We interpret that structural transformation associated with a change in the phase of the defect is suppressed at low temperatures because it disturbs the ordering of the surrounding buckled dimers.
引用
收藏
页码:3837 / 3840
页数:4
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