Structure transformation of the C defects observed at low temperature (80 K)

被引：4

作者：

Hata, K ^{[1
]}

Morita, R

Yamashita, M

Shigekawa, H

机构：

[1] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Japan Sci & Technol Corp, CREST, Sapporo, Hokkaido 0608628, Japan

[3] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[4] Univ Tsukuba, Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6B期

关键词：

scanning tunneling microscopy; scanning tunneling spectroscopies; surface electronic phenomena; silicon; surface defects;

D O I：

10.1143/JJAP.38.3837

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dynamical characteristics of the C defect at low temperature (80 K) were studied by sequential scanning tunneling microscopy observations. We found that the: C defect frequently transforms into a another type of defect termed as the C-2(LT) defect. In addition, the reversal C-2(LT) to C defect structural transformation was observed which implies that the C-2(LT) defect is a metastable state of the C defect. The observed structural transformation was completely different from that observed at room temperature. We interpret that structural transformation associated with a change in the phase of the defect is suppressed at low temperatures because it disturbs the ordering of the surrounding buckled dimers.

引用

页码：3837 / 3840

页数：4

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