Spontaneous fluctuation between symmetric and buckled dimer domains of Si(100) at 80 K

被引：5

作者：

Hata, K

Kimura, T

Sainoo, Y

Miyake, K

Morita, R

Yamashita, M

Shigekawa, H

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058576, Japan

[2] Univ Tsukuba, CREST, Japan Sci & Technol Corp, JST, Tsukuba, Ibaraki 3058576, Japan

[3] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

[4] Hokkaido Univ, CREST, Japan Sci & Technol Corp, JST, Sapporo, Hokkaido 0608628, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 5A期

关键词：

Si(100); dimers; fluctuation; STM; P defect; C defect;

D O I：

10.1143/JJAP.38.2904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

At 80 K, not all the: aimers of Si(100) appear buckled in the scanning tunneling microscopy (STM) images but a certain number of the dimers are observed in a symmetric configuration. We report on observations of a two-dimensional spontaneous fluctuation of the symmetric double left right arrow buckled dimer domains at some particular locations. We interpret the spontaneous fluctuation to be induced by the competition of several antiphased c(4 x 2) buckled domains to expand. The fluctuation of domains was interpreted by two mechanisms: a fast switching between buckled dimer domains and symmetric dimers induced by migration of P defects.

引用

页码：2904 / 2909

页数：6

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