Evaluation of bit error rate for ferroelectric data storage

被引:13
作者
Hiranaga, Y [1 ]
Cho, Y [1 ]
机构
[1] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 9B期
关键词
ferroelectric data storage; scanning nonlinear dielectric microscopy; LiTaO3; bit error rate;
D O I
10.1143/JJAP.43.6632
中图分类号
O59 [应用物理学];
学科分类号
摘要
Bit data was recorded on a LiTaO3 single-crystal medium using a data storage system which was based on scanning nonlinear dielectric microscopy, and bit error rate was evaluated. The recording medium with a highly homogeneous thickness of 119 nm was prepared employing both polarization controlled wet etching and dry etching techniques. A 256 x 256 data bit array was recorded at an areal density of 258 Gbit/inch(2). The bit error rate was determined to be 1.2 x 10(-3) by visual inspection. An automated analysis method was subsequently discussed in detail.
引用
收藏
页码:6632 / 6634
页数:3
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