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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

被引：39
作者：
Chang, PC [1 ]
Baca, AG
Li, NY
Sharps, PR
Hou, HQ
Laroche, JR
Ren, F
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87123 USA
[2] EMCORE Corp, Emcore Photovolt, Albuquerque, NM 87123 USA
[3] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 19期
关键词：
D O I：
10.1063/1.126476
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 HBT takes advantage of the narrower band gap energy (E-g=1.2 eV) of In0.03Ga0.97As0.99N0.01, which is lattice matched to GaAs. Compared with the Al0.3Ga0.7As/GaAs material system, the Al0.3Ga0.7As/In0.03Ga0.97As0.99N0.01 material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al0.3Ga0.7As/GaAs HBT. (C) 2000 American Institute of Physics. [S0003-6951(00)04619-2].
引用
收藏
页码：2788 / 2790
页数：3
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