The mechanism of void formation in the growth of 3C-SiC thin film in Si substrate

被引：4

作者：

Seo, YH ^{[1
]}

Kim, KC

Shim, HW

Nahm, KS

Suh, EK

Lee, HJ

Hwang, YG

Kim, DK

Lee, BT

机构：

[1] Chonbuk Natl Univ, Sch Chem Engn & Technol, Chonju 560756, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 560756, South Korea

[3] Chonbuk Natl Univ, Dept Phys, Chonju 560756, South Korea

[4] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 560756, South Korea

[5] Wonkwang Univ, Dept Phys, Iksan 570749, South Korea

[6] Chonnam Natl Univ, Dept Met Engn, Kwangju 500757, South Korea

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

void-free; 3C-SiC; void formation mechanism; rapid-thermal CVD; tetramethylsilane;

D O I：

10.4028/www.scientific.net/MSF.264-268.199

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of growth parameters has been examined for the epitaxial growth of void-free SiC film on Si substrate. Void-free single crystalline SiC films were grown when the Si substrate was heated after the flow of TMS. The increase of TMS flow rate grew void-free SiC films, but the crystallinity of the films varied from single crystalline to polycrystalline with increasing TMS flow rates. The growth of void-free single crystalline SiC films was observed at substrate temperatures below 1000 degrees C. The mechanism of the void formation was briefly discussed in this work.

引用

页码：199 / 202

页数：4

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