ANTIPHASE-DOMAIN-FREE GROWTH OF CUBIC SIC ON SI(100)

[1] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[2] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J]. SURFACE SCIENCE, 1980, 93 (01) : 145 - 158

[3] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 763 - 765

[4] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[5] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[8] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L78 - L80

[9] FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 692 - 693

[10] SURFACE-MORPHOLOGY OF CUBIC SIC(100) GROWN ON SI(100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 538 - 544

[1] STRUCTURAL AND ELECTRONIC PROPERTIES OF STEPPED SEMICONDUCTOR SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 389 - 396

[2] LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J]. SURFACE SCIENCE, 1980, 93 (01) : 145 - 158

[3] ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 763 - 765

[4] HETERO-EPITAXIAL GROWTH OF CUBIC SILICON-CARBIDE ON FOREIGN SUBSTRATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1235 - 1236

[5] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +

[6] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462

[7] NISHINO S, 1983, 15TH C SOL STAT DEV, P317

[8] SI(001)-2X1 SINGLE-DOMAIN STRUCTURE OBTAINED BY HIGH-TEMPERATURE ANNEALING [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L78 - L80

[9] FABRICATION OF INVERSION-TYPE N-CHANNEL MOSFETS USING CUBIC-SIC ON SI(100) [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 692 - 693

[10] SURFACE-MORPHOLOGY OF CUBIC SIC(100) GROWN ON SI(100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 538 - 544