Selective area growth of GaN using gas source molecular beam epitaxy

被引：13

作者：

Gupta, VK ^{[1
]}

Averett, KL ^{[1
]}

Koch, MW ^{[1
]}

McIntyre, BL ^{[1
]}

Wicks, GW ^{[1
]}

机构：

[1] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 03期

关键词：

gallium nitride; molecular beam epitaxy; selective area growth; lateral epitaxial overgrowth;

D O I：

10.1007/s11664-000-0071-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ammonia cracking efficiencies on various surfaces were examined. The following is an ordering of surfaces according to their ammonia cracking efficiencies: GaN (highest), Si(3)N(4), SiO(2) (lowest). Selective area growth of GaN was performed over SiO(2) masks deposited on GaN previously grown on sapphire substrates using ammonia-based molecular beam epitaxy. GaN growth on patterned SiO(2)/GaN is very selective at a growth temperature of 800 degrees C. Good quality growth occurs in the window region with no deposits on the mask surface when growth is performed at 800 degrees C, whereas some deposits on the SiO(2) masks accumulate when growth is performed at 700 degrees C. The ratio of lateral growth rate to vertical growth rate is less than or equal to 1.

引用

页码：322 / 324

页数：3

共 10 条

[1] Molecular beam epitaxy growth kinetics for group III nitrides [J].