Near-infrared light-emitting ambipolar organic field-effect transistors

被引：135

作者：

Smits, Edsger C. P.

Setayesh, Sepas

Anthopoulos, Thomas D.

Buechel, Michael

Nijssen, Wim

Coehoorn, Reinder

Blom, Paul W. M.

de Boer, Bert

de Leeuw, Dago M.

机构：

[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[2] Univ Groningen, Mat Sci Ctr Plus, NL-9747 AG Groningen, Netherlands

[3] Dutch Polymer Inst, NL-9747 AG Groningen, Netherlands

[4] Imperial Coll London, Blackett Lab, Dept Phys, London SW7 2BW, England

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 05期

关键词：

D O I：

10.1002/adma.200600999

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Near-IR light-emitting ambipolar OFETs are demonstrated, employing a squaraine derivative as the electroactive layer. Efficient control of the emission-region position in the channel is achieved by varying the drain/gate potentials. By using a transport model, combined with experimental results, strong metal-induced electroluminescence quenching is observed when light emission takes place in close proximity to the source-drain electrodes (see figure).

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页码：734 / +

页数：6

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