Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high-κ films prepared by molecular beam deposition

被引：26

作者：

Lopes, J. M. J. ^{[1
]}

Littmark, U.

Roeckerath, M.

Lenk, St.

Schubert, J.

Mantl, S.

Besmehn, A.

机构：

[1] Res Ctr Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[2] Res Ctr Julich, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

[3] Res Ctr Julich, Cent Div Analyt Chem ZCH, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 101卷 / 10期

关键词：

D O I：

10.1063/1.2735396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous LaScO3 thin films were grown on (100) Si by molecular beam deposition and the effects of postdeposition thermal treatments on the film properties were studied after anneals in O-2 or inert Ar atmosphere at 400 or 650 degrees C. Rutherford backscattering spectrometry, transmission electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy (XPS) were employed to investigate the samples. Capacitance-voltage and current-voltage measurements allowed their electrical characterization. Postdeposition annealing in O-2 reduces hysteresis, flatband voltage, and also leakage current density. In contrast, films treated in Ar ambient revealed a different behavior. The observations were associated with the interface evolution as studied by XPS, which verify that an O-2 atmosphere favors the formation of a SiO2-rich interface between the film and the Si substrate, while a La-Sc-silicate-like compound predominates in this region after treating the samples in Ar. Additionally, postdeposition annealing results in an improvement of the dielectric constant up to 33, which is higher than that previously determined for LaScO3 or other amorphous alternative high-kappa oxide films deposited by various techniques. (c) 2007 American Institute of Physics.

引用

页数：5

共 13 条

[1] Band alignment between (100)Si and complex rare earth/transition metal oxides [J].

Afanas'ev, VV ;

Stesmans, A ;

Zhao, C ;

Caymax, M ;

Heeg, T ;

Schubert, J ;

Jia, Y ;

Schlom, DG ;

Lucovsky, G .

APPLIED PHYSICS LETTERS, 2004, 85 (24) :5917-5919

[2]

[Anonymous], 2005, INT TECHN ROADM SEM

[3] Thermal stability of amorphous LaScO3 films on silicon [J].

Edge, L. F. ;

Schlom, D. G. ;

Rivillon, S. ;

Chabal, Y. J. ;

Agustin, M. P. ;

Stemmer, S. ;

Lee, T. ;

Kim, M. J. ;

Craft, H. S. ;

Maria, J. -P. ;

Hawley, M. E. ;

Hollaender, B. ;

Schubert, J. ;

Eisenbeiser, K. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[4] Effects of crystallization on the electrical properties of ultrathin HfO2 dielectrics grown by atomic layer deposition [J].

Kim, H ;

McIntyre, PC ;

Saraswat, KC .

APPLIED PHYSICS LETTERS, 2003, 82 (01) :106-108

[5] Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current [J].

Kim, Kyoung H. ;

Farmer, Damon B. ;

Lehn, Jean-Sebastien M. ;

Rao, P. Venkateswara ;

Gordon, Roy G. .

APPLIED PHYSICS LETTERS, 2006, 89 (13)

[6] Dielectric property and thermal stability of HfO2 on silicon [J].

Lin, YS ;

Puthenkovilakam, R ;

Chang, JP .

APPLIED PHYSICS LETTERS, 2002, 81 (11) :2041-2043

[7] Amorphous lanthanum lutetium oxide thin films as an alternative high-κ gate dielectric [J].

Lopes, J. M. J. ;

Roeckerath, M. ;

Heeg, T. ;

Rije, E. ;

Schubert, J. ;

Mantl, S. ;

Afanas'ev, V. V. ;

Shamuilia, S. ;

Stesmans, A. ;

Jia, Y. ;

Schlom, D. G. .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[8] Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si -: art. no. 022901 [J].

Miotti, L ;

Bastos, KP ;

Driemeier, C ;

Edon, V ;

Hugon, MC ;

Agius, B ;

Baumvol, IJR .

APPLIED PHYSICS LETTERS, 2005, 87 (02)

[9] Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition [J].

Park, BE ;

Ishiwara, H .

APPLIED PHYSICS LETTERS, 2003, 82 (08) :1197-1199

[10] High dielectric constant gate oxides for metal oxide Si transistors [J].

Robertson, J .

REPORTS ON PROGRESS IN PHYSICS, 2006, 69 (02) :327-396

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