Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si -: art. no. 022901

被引：39

作者：

Miotti, L ^{[1
]}

Bastos, KP

Driemeier, C

Edon, V

Hugon, MC

Agius, B

Baumvol, IJR

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Paris 11, Lab Phys Gaz & Plasmas, F-91405 Orsay, France

[3] Univ Caxias Sul, CCET, Porto Alegre, RS, Brazil

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 02期

关键词：

D O I：

10.1063/1.1989447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

LaAlO3 films were deposited on p-type Si(100) by sputtering from a LaAlO3 target. C x V characteristics were determined in nonannealed and O-2-annealed capacitors having LaAlO3 films as dielectric and RuO2 as top electrode. Thermal annealing in O-2 atmosphere reduced flat band voltage to acceptable values for advanced Si-based devices. O-16-O-18 isotopic substitution was characterized by Rutherford backscattering spectrometry and nuclear resonant reaction profiling. Chemical analysis of the films was accomplished by x-ray photoelectron spectroscopy. The electrical improvements observed after thermal annealing in O-2 were attributed to the incorporation of oxygen from the gas phase, possibly healing oxygen vacancies in the films and providing mobile oxygen to the interface. (c) 2005 American Institute of Physics.

引用

页数：3

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