GaAs/AlGaAs quantum well photodetectors with a cutoff wavelength at 28 μm

被引:43
作者
Perera, AGU [1 ]
Shen, WZ
Matsik, SG
Liu, HC
Buchanan, M
Schaff, WJ
机构
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.121126
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the longest (lambda(c)=28.6 mu m) far-infrared quantum well photodetectors (QWIPs) based on a bound-to-bound intersubband transition in GaAs/AlGaAs. The responsivity is comparable with that of mid-infrared GaAs/AlGaAs and InGaAs/GaAs QWIPs, A peak responsivity of 0.265 A/W and detectivity of 2.5 x 10(9) cm root Hz/W at a wavelength of 26.9 mu m and 4.2 K have been achieved, Based on the temperature dependent dark current and responsivity results, it is expected that similar performance can be obtained at least up to 20 K. (C) 1998 American Institute of Physics.
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收藏
页码:1596 / 1598
页数:3
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