Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors

被引：29

作者：

Suh, KY

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Nanoelect Inst, Seoul 151742, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.1289515

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple model for the Ge composition in Si1-xGex films grown from SiH2Cl2/GeH4 precursors is developed on the basis of adsorption and desorption kinetics for the intermediate temperature range (600 degrees C < T < 900 degrees C). For this system, the solid phase composition of Ge, x, is related to the gas phase composition ratio of the two source gases, G, by x(2)/(1-x) = constantxG, which contrasts with the conventional relationship, x/(1-x) = constantxG, that is known for SiH4/GeH4 chemical vapor deposition. The proportionality constant depends not only on temperature but also on pressure. The model compares well with the experimental data in the literature. (C) 2000 American Institute of Physics. [S0021-8979(00)04819-2].

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页码：4044 / 4047

页数：4

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