KINETICS OF SILICON-GERMANIUM DEPOSITION BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：50

作者：

KAMINS, TI ^{[1
]}

MEYER, DJ ^{[1
]}

机构：

[1] ASM EPITAXY,TEMPE,AZ 85282

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.105986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of Si(1-x)Ge(x) alloy layers in an atmospheric-pressure, chemical vapor deposition reactor has been studied by separately examining the silicon and the germanium components of the deposition rate. The overall deposition rate increases approximately linearly with GeH4 partial pressure, but is relatively independent of SiH2Cl2 partial pressure. The silicon component of the deposition rate increases rapidly with increasing temperature for a constant germanium content, but the germanium component changes only slowly above about 675-degrees-C, and is probably limited by mass transport.

引用

页码：178 / 180

页数：3

共 15 条

[1]

AGNELLO PD, 1990, OCT AM VAC SOC M TOR

[2]

CHANG S, 1987, ECS P, V87, P122

[3] INFLUENCE OF ASH3, PH3, AND B2H6 ON GROWTH-RATE AND RESISTIVITY OF POLYCRYSTALLINE SILICON FILMS DEPOSITED FROM A SIH4-H2 MIXTURE [J].