LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SI AND SIGE LAYERS AT ATMOSPHERIC-PRESSURE

被引：74

作者：

DEBOER, WB ^{[1
]}

MEYER, DJ ^{[1
]}

机构：

[1] ASM EPITAXY,TEMPE,AZ 85282

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 12期

关键词：

D O I：

10.1063/1.104338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In an effort to determine the low-temperature limit for the growth of Si and Si(1-x)Ge(x) epitaxial layers in an atmospheric-pressure chemical vapor deposition (CVD) reactor, good quality material has been obtained at temperatures down to 600-degrees-C, using SiH2Cl2 and GeH4 in H-2 ambient. Si/Si(1-x)Ge(x)/Si heteroepitaxial structures are of good crystalline quality as well, showing abrupt interfaces. The Si-growth rate enhancement, caused by the addition of GeH4 to the gas flow at low temperatures, turns into growth-rate inhibition at higher temperatures. In this experiment oxygen and water partial pressures are several orders of magnitude higher than in ultrahigh vacuum CVD, without causing noticeable negative effects.

引用

页码：1286 / 1288

页数：3

共 8 条

[1] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE [J].