LOW-TEMPERATURE SELECTIVE EPITAXIAL-GROWTH OF SILICON AT ATMOSPHERIC-PRESSURE

被引：76

作者：

SEDGWICK, TO

BERKENBLIT, M

KUAN, TS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 26期

关键词：

D O I：

10.1063/1.101036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2689 / 2691

页数：3

共 16 条

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