Surface electronic structure of Gd(0001) films on W(110)

被引：12

作者：

Pascal, R

Zarnitz, C

Bode, M

Getzlaff, M

Wiesendanger, R

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Microstruct Res Ctr, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1997年 / 65卷 / 06期

关键词：

D O I：

10.1007/s003390050628

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of Gd islands on W(110) was studied by means of scanning tunneling microscopy (STM). The empty and filled parts of the well-known d(z2)-like surface state appear as peaks in the tunneling spectra above Cd islands with a local coverage of 4-15 ML but not above the first ML. Small disturbances, induced by the tunneling tip by the application of a bias voltage which exceeds the tunneling barrier height, lead to a collapse of the surface state. This collapse is visible in the apparent height of constant-current STM-images. Scanning tunneling spectroscopy addresses the origin of the change to the suppression of the Gd(0001) surface state by hydrogen transferred from the tip to the surface.

引用

收藏

页码：603 / 606

页数：4

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