Imaging 100 nm contacts with high transmission attenuated phase shift masks

被引：4

作者：

Beach, JV ^{[1
]}

Petersen, JS ^{[1
]}

Eynon, B ^{[1
]}

Taylor, D ^{[1
]}

Gerold, DJ ^{[1
]}

Maslow, MJ ^{[1
]}

机构：

[1] Int SEMATECH, Austin, TX USA

来源：

22ND ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 2002年 / 4889卷

关键词：

high-transmission attPSM; contacts holes; vias; 193 run lithography; MEEF;

D O I：

10.1117/12.467763

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This study explores the capability of printing 100 rum contacts through the use of 9% and 15% attenuated phase shift masks and a 0.75 NA 193 nm scanner. The mask designs targeted simultaneous solutions for 100 nm contacts at pitches from 200 nm to 300 run. The two masks were successfully manufactured from experimental MoSiON embedded-attenuated phase shift mask (EAPSM) blanks. The 100 nm contacts were successfully printed with a depth of focus (DOF) from 0.1-0.7 mum. Overlapping process windows were not achieved but were possible upon adjustment of the mask biases. The observed mask error enhancement factor (MEEF) was approximately 3 for the 220 nm pitch. Side lobe printing was not observed for either mask.

引用

页码：1242 / 1252

页数：11

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