Defects in CdTe and Cd1-xZnxTe

被引：68

作者：

Hofmann, DM

Stadler, W

Christmann, P

Meyer, BK

机构：

[1] TU München, Physik-Department, E16

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(96)00287-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The current knowledge on extrinsic and intrinsic point defects in CdTe and Cd1-xZnxTe as obtained by electron paramagnetic resonance and related techniques is reviewed. Special attention will be paid to the properties of intrinsic defects such as vacancies (V-Cd and V-Te) and complexes formed with dopants (A centres: V-Cd-donor, and donor-V-Cd-donor complexes). In view of the high resistive material required for X- and gamma-ray detector applications such defects seem to play an important role.

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页码：117 / 120

页数：4

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