Image deconvolution for defected crystals in field-emission high-resolution electron microscopy

It is demonstrated that for images taken with a field-emission high-resolution electron microscope the image deconvolution based on the weak-phase object approximation is available for restoring the crystal defects with the resolution close to the information resolution limit. The image deconvolution is firstly carried out for simulated [110] images of perfect and defect Si crystal structure models with different thickness. The deconvoluted images reveal the atomic pairs as black dumbbells and show the correct atomic configuration including that at the twin boundary and near the 60 degrees dislocation core for the crystal thickness at least up to 76 Angstrom. An experimental [110] image of SiGe/Si has been restored to reveal an extended stacking fault sandwiched between two partial dislocations at the atomic level.