Polycrystalline silicon produced by Ni-silicide mediated crystallization of amorphous silicon in an electric field

被引：41

作者：

Jang, J ^{[1
]}

Park, SJ ^{[1
]}

Kim, KH ^{[1
]}

Cho, BR ^{[1
]}

Kwak, WK ^{[1
]}

Yoon, SY ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Phys, Seoul 130701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 05期

关键词：

D O I：

10.1063/1.1286064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Crystallization of amorphous silicon (a-Si) by Ni-silicide mediated crystallization (SMC) has been studied in an electric field with Ni area density between 3.3x10(13) and 5.7x10(14) atoms/cm(2) on the a-Si. The needlelike crystallites of similar to 1000 Angstrom in width and several micron length grow in the < 111 > directions with the < 011 > normal to the film surface when Ni area density was between 5.1x10(13) and 2.9x10(14) atoms/cm(2). However, dendritic crystallites have been found in the a-Si matrix without complete crystallization of the a-Si when the Ni area density was 3.3x10(13) atoms/cm(2). The field-effect mobility of the thin-film transistor using the SMC poly-Si was 60-112 cm(2)/V s when the average Ni bulk density in the poly-Si was around 3.0x10(18) atoms/cm(3), and it decreases with increasing Ni density. (C) 2000 American Institute of Physics. [S0021-8979(00)02313-6].

引用

页码：3099 / 3101

页数：3

共 16 条

[1]

[Anonymous], PHYS SEMICONDUCTOR D

[2]

BATSTONE JL, 1994, SOLID STATE PHENOM, V37, P257

[3] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].