Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy

被引：162

作者：

Yoshida, J

Kita, T

Wada, O

Oe, K

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

[2] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

temperature-insensitive band gap; GaAsBi; MOVPE;

D O I：

10.1143/JJAP.42.371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed photoreflectance (PR) spectroscopy in order to investigate the fundamental band gap of GaAs1-xBix alloys. The temperature dependence of the band gap energy was evaluated by analyzing of the Franz-Keldysh oscillation in the PR spectra. With increasing Bi content, the band gap energy of GaAs1-xBix alloy is reduced, which shows a large optical bowing. The temperature coefficient of the band,gap decreases appreciably in alloys with increasing Bi content. For x = 0.026, the temperature coefficient near room temperature is -0.15 meV/K which is 1/3 of the value for GaAs.

引用

页码：371 / 374

页数：4

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