Effect of hydrogen on the surface-energy anisotropy of diamond and silicon

被引:55
作者
Hong, S [1 ]
Chou, MY [1 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 11期
关键词
D O I
10.1103/PhysRevB.57.6262
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have evaluated the surface free energies of hydrogen-covered (100), (111), and (110) surfaces of diamond and silicon as a function of the hydrogen chemical potential using first-principles methods. The change in surface-energy anisotropy and equilibrium crystal shape due to hydrogen adsorption is examined. The three low-index facets are affected differently by the presence of hydrogen and unexpected differences are found between diamond and silicon. Taking into account possible formation of local facets on the hydrogen-covered (100) surfaces, we find that the dihydride phase is not stable on both C(100) and Si(100). nor is the 3x1 phase on C(100).
引用
收藏
页码:6262 / 6265
页数:4
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