Exchange coupling in silicon double quantum dots

被引：16

作者：

Hada, Y ^{[1
]}

Eto, M ^{[1
]}

机构：

[1] Keio Univ, Fac Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 10期

关键词：

double quantum dot; silicon; multivalley; exchange coupling; quantum computation;

D O I：

10.1143/JJAP.43.7329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An exchange coupling between localized electron spins is evaluated in silicon double quantum dots, taking account of electron-electron interaction exactly. A multivalley structure of conduction band is taken into account within the effective mass approximation. We show that the intervalley tunneling between the quantum dots plays an important role in the exchange coupling. The exchange coupling can be controlled by gating the central electrode of the double quantum dots, which is applicable to two-qubit gate operation for quantum computation using the electron spins.

引用

页码：7329 / 7336

页数：8

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