Dimensionality-dependent self-energy corrections and exchange-correlation potential in semiconductor nanostructures

被引：32

作者：

Delerue, C

Allan, G

Lannoo, M

机构：

[1] Inst Elect & Microelect Nord, CNRS, UMR 8520, Dept ISEN, F-59046 Lille, France

[2] ISEM, Lab Mat & Microelect Provence, F-83000 Toulon, France

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.90.076803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study the quasiparticle gap in semiconductor nanostructures versus dimensionality and compare it to the value obtained in the local density approximation. We first develop general arguments based on the GW approach which we then substantiate numerically by a tight binding version of this theory. We show that the gap correction is dominated by a macroscopic surface self-polarization term and point out its nonmonotonic behavior versus dimensionality.

引用

收藏

页码：4 / 076803

页数：4

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