Studies on structural and electrical properties of spray deposited SnO2:F thin films as a function of film thickness

被引:80
作者
Elangovan, E [1 ]
Singh, MP
Ramamurthi, K
机构
[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
[2] Bharathidasan Univ, Dept Phys, Tiruchirappalli 620024, Tamil Nadu, India
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 113卷 / 02期
关键词
Tin oxide thin films; spray pyrolysis; SnCl2; precursor; fluorine doping and structural properties;
D O I
10.1016/j.mseb.2004.07.072
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of fluorine-doped tin oxide (SnO2:F) on glass were prepared by spray pyrolysis technique from an economic stannous chloride (SnCl,) precursor. In order to find out the effect of solution concentration on growth of the films, these films were prepared using different precursor concentrations. In the present paper we report the thickness dependent properties of SnO2:F films. X-ray diffraction (XRD) studies revealed that the preferred orientation of the films varies with the film thickness and are reflected in scanning electron microscope (SEM) studies as they showed different grain shapes. The minimum sheet resistance (3.2 Omega/rectangle) achieved in the present study was found to be the lowest among the earlier reported values for these films prepared from SnCl, precursor. The possibility of various scattering mechanisms as to be a dominant factor in limiting the mobility of charge carriers has been analysed. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:143 / 148
页数:6
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